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Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:393
Date:
2017-05-24
DOI:
http://dx.doi.org/10.1186/s11671-017-2164-z

Author Information

Name Institution
Wei ZhangNanjing University
Ji-Zhou KongNanjing University
Zheng-Yi CaoNanjing University
Aidong LiNanjing University
Lai-Guo WangNanjing University
Lin ZhuNanjing University
Xin LiNanjing University
Yanqiang CaoNanjing University
Di WuNanjing University

Films

Plasma TiN

Hardware used: Picosun R200
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 400C

Thermal HfO2

Hardware used: Picosun R200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Thermal TiO2

Hardware used: Picosun R200
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Keithley 4200-SCS

Substrates

Notes

1048