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The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices

Type:
Journal
Info:
2014 IEEE International Symposium on Circuits and Systems (ISCAS)
Date:
2014-06-01
DOI:
http://dx.doi.org/10.1109/ISCAS.2014.6865158

Author Information

Name Institution
Katrina A. MorganUniversity of Southampton
Ruomeng HuangUniversity of Southampton
Stuart PearceUniversity of Southampton
C.H. de GrootUniversity of Southampton

Films

Plasma HfO2

Hardware used: Oxford Instruments FlexAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 300-400C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

TiN

Notes

Oxford Instruments FlexAL PEALD HfO2 for resistive RAM device study.
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