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Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization

Type:
Other
Info:
Final technical report to Office of the Chief of Naval Research
Date:
1996-09-01
DOI:
http://www.dtic.mil/dtic/tr/fulltext/u2/a252352.pdf

Author Information

Name Institution
R. F. DavisNorth Carolina State University
S. BedairNorth Carolina State University
N. A. El-MasryNorth Carolina State University
Z. SitarNorth Carolina State University

Films

Plasma SiC

Hardware used: Custom
Disilane, Si2H6
CAS#: 1590-87-0
Ethylene, Ethene, C2H4
CAS#: 74-85-1
NH3, Ammonia
CAS#: 7664-41-7
TEA, Al(C2H5)3, AlEt3, Triethyl Aluminum
CAS#: 97-93-8
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 850-870C

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: HP 4145A Semiconductor Parameter Analyzer

Substrates

Silicon

Notes

1192