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Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

Type:
Journal
Info:
Applied Physics Letters 102, 111910 (2013)
Date:
2013-03-12
DOI:
http://dx.doi.org/10.1063/1.4798337

Author Information

Name Institution
Geert RampelbergGhent University
Kilian Devloo-CasierGhent University
Davy DeduytscheGhent University
Marc SchaekersIMEC
Nicolas BlascoAir Liquide
Christophe DetavernierGhent University

Films

Plasma VN

Hardware used: Custom
TEMAV, (EtMeN)4V, [(C2H5)(CH3)N]4V, Tetrakis(EthylMethylAmido) Vanadium, Vanadium Ethylmethylamide
CAS#: 791114-66-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 70-150C

Thermal VN

Hardware used: Custom
TEMAV, (EtMeN)4V, [(C2H5)(CH3)N]4V, Tetrakis(EthylMethylAmido) Vanadium, Vanadium Ethylmethylamide
CAS#: 791114-66-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 70-150C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Areal Density
Analysis: XRF, X-Ray Fluorescence
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

SiO2

Notes

599