About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology

Type:
Journal
Info:
Nanomaterials 2021, 11, 3282
Date:
2021-11-29
DOI:
http://dx.doi.org/10.3390/nano11123282

Author Information

Name Institution
Guibai XieChina Academy of Space Technology (Xi’an)
Hongwu BaiChina Academy of Space Technology (Xi’an)
Guanghui MiaoChina Academy of Space Technology (Xi’an)
Guobao FengChina Academy of Space Technology (Xi’an)
Jing YangChina Academy of Space Technology (Xi’an)
Yun HeChina Academy of Space Technology (Xi’an)
Xiaojun LiChina Academy of Space Technology (Xi’an)
Yun LiChina Academy of Space Technology (Xi’an)

Films

Thermal Al2O3

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 130C

Plasma TiN

Hardware used: Picosun R200
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 160C

Plasma C

Hardware used: Picosun R200
Carbon tetrabromide, CBr4
CAS#: 558-13-4
Deposition Temperature = 160C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension Edge

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Raman Shift
Analysis: Raman Spectroscopy
Diagnostic: -

Characteristic: Secondary Electron Yield
Analysis: Custom
Diagnostic: Custom

Substrates

SiO2
Al
Ag

Notes

1650