About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy

Type:
Journal
Info:
Applied Surface Science 112 (1997) 75-81
Date:
1997-03-01
DOI:
https://doi.org/10.1016/S0169-4332(96)01020-3

Author Information

Name Institution
Shin YokoyamaHiroshima University
Hiroshi GotoHiroshima University
Takahiro MiyamotoHiroshima University
Norihiko IkedaHiroshima University
Kentaro ShibaharaHiroshima University

Films

Other SiNx

Hardware used: Custom Microwave Plasma
DCS, H2SiCl2, DiChloroSilane
CAS#: 4109-96-0
NH3, Ammonia
CAS#: 7664-41-7
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 250-500C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FTIR reflectance
Diagnostic: -

Characteristic: Bonding States
Analysis: FTIR reflectance
Diagnostic: -

Substrates

Si(100)
SiO2
Si3N4

Notes

1588