DCS, H₂SiCl₂, DiChloroSilane, CAS# 4109-96-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 10 record(s).

Number	Title
1	Atomic layer epitaxy of Si using atomic H
2	A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
3	Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
4	Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
5	Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
6	Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
7	Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
8	Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
9	Challenges in spacer process development for leading-edge high-k metal gate technology
10	Evaluation of Stress Induced by Plasma Assisted ALD SiN Film