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Atomic layer controlled deposition of silicon nitride with self-limiting mechanism

Type:
Journal
Info:
Appl. Phys. Lett. 68, 3257 (1996)
Date:
1996-03-28
DOI:
http://dx.doi.org/10.1063/1.116566

Author Information

Name Institution
Hiroshi GotoHiroshima University
Kentaro ShibaharaHiroshima University
Shin YokoyamaHiroshima University

Films

Plasma SiNx

Hardware used: Unknown
DCS, H2SiCl2, DiChloroSilane
CAS#: 4109-96-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Unknown

Notes

73