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Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon

Type:
Journal
Info:
J. Vac. Sci. Technol. A 16(2), Mar/Apr 1998
Date:
1997-11-28
DOI:
http://dx.doi.org/10.1116/1.581018

Author Information

Name Institution
Eiji HasunumaTokyo Institute of Technology
Satoshi SugaharaTokyo Institute of Technology
Shinji HoshinoTokyo Institute of Technology
Shigeru ImaiTokyo Institute of Technology
Keiji IkedaTokyo Institute of Technology
Masakiyo MatsumuraTokyo Institute of Technology

Films

Plasma Si

Hardware used: Custom
DCS, H2SiCl2, DiChloroSilane
CAS#: 4109-96-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 475-675C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: -

Substrates

Notes

1223