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Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

Type:
Conference Proceedings
Info:
2015 2nd International Conference on Chemical and Material Engineering (ICCME 2015)
Date:
2015-12-27
DOI:
http://dx.doi.org/10.1051/matecconf/20163901010

Author Information

Name Institution
Z.X. ChenA*STAR (Agency for Science, Technology and Research)
X. (Picosun Asia) LiPicosun Asia
W.-M. LiPicosun Asia
G.-Q. LoA*STAR (Agency for Science, Technology and Research)

Films

Plasma TiN

Hardware used: Unknown
TEMATi, (EtMeN)4Ti, [(C2H5)(CH3)N]4Ti, Tetrakis(EthylMethylAmido) Titanium, Titanium Ethylmethylamide
CAS#: 308103-54-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 150-350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: -
Diagnostic: -

Characteristic: Density
Analysis: -
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Silicon

Notes

480