About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases

Type:
Journal
Info:
ECS Journal of Solid State Science and Technology, 3 (6) P185-P191 (2014)
Date:
2014-04-18
DOI:
http://dx.doi.org/10.1149/2.010406jss

Author Information

Name Institution
Gi-hee ChoPohang University of Science and Technology (POSTECH)
Shi-Woo RheePohang University of Science and Technology (POSTECH)

Films

Plasma TiCN

Hardware used: Custom
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
CH4, Methane
CAS#: 74-82-8
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma TiCN

Hardware used: Custom
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma TiCN

Hardware used: Custom
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Work Function
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Keithley 2400 Source Meter

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-840A

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Rigaku D/Max-2500

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Substrates

SiO2

Notes

NH3 plasma gave decreasing GPC with increasing RF power, while H2/CH4 had increasing GPC with increasing RF power. NH3 grows film without plasma.
1000C 30s post deposition anneal and 450C 30min post metal anneal.
Page P186 discussion of why H2 plasma films have oxygen uptake when exposed to air.
91