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Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications

Type:
Journal
Info:
Journal of The Electrochemical Society, 157 (10) H930-H933 (2010)
Date:
2010-06-10
DOI:
http://dx.doi.org/10.1149/1.3459932

Author Information

Name Institution
Sanghun JeonSamsung Electronics Co.
Sungho ParkSamsung Electronics Co.

Films

Thermal Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Plasma TiN

Hardware used: Unknown
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
H2, Hydrogen
CAS#: 1333-74-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 150-300C

Plasma TiCN

Hardware used: Unknown
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
H2, Hydrogen
CAS#: 1333-74-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 150-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Work Function
Analysis: Kelvin Probe (SPV) Surface PhotoVoltage Measurements
Diagnostic: -

Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Al2O3

Notes

734