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Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics

Type:
Conference Proceedings
Info:
ASMC 2015 - SEMI Advanced Semiconductor Manufacturing Conference
Date:
2015-05-03
DOI:
http://asmc2015.conferencespot.org/57461-semi-1.2058836/t-001-1.2059455/f-005-1.2059456/a-029-1.2059514/an-029-1.2059515

Author Information

Name Institution
Dillon GregoryState University of New York at Albany
George MarshallState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films

Plasma RuCo

Hardware used: Aixtron Genus Stratagem 200
Bis(cyclopentadienyl)ruthenium, Ruthenocene, Cp2Ru, (C5H5)2Ru
CAS#: 1287-13-4
cobaltacene, bis(cyclopentadienyl)cobalt, Cp2Co
CAS#: 1277-43-6
NH3, Ammonia
CAS#: 7664-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 120-250C

Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Substrates

SiO2

Notes

626