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Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing

Type:
Journal
Info:
RSC Adv., 2016, 6, 98337-98343
Date:
2016-10-09
DOI:
http://dx.doi.org/10.1039/C6RA19188F

Author Information

Name Institution
Felix MattelaerGhent University
Tom BosserezKU Leuven
Jan RongéKU Leuven
Johan A. MartensKU Leuven
Jolien DendoovenGhent University
Christophe DetavernierGhent University

Films

Thermal MnOx

Hardware used: Custom
Mn(TMHD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) manganese
CAS#: 14324-99-3
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 180C

Plasma MnOx

Hardware used: Custom
Mn(TMHD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) manganese
CAS#: 14324-99-3
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 180C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension Edge

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Quanta 200 FEG

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Diagnostic: Tecan Infinite M200 Pro

Characteristic: Photoelectrochemical (PEC) Activity
Analysis: Linear Sweep Voltammetry
Diagnostic: -

Substrates

Silicon
SiO2

Notes

In on-line thesis.
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