Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten

Type:
Journal
Info:
Journal of The Electrochemical Society, 150 (10) C740-C744 (2003)
Date:
2003-09-02

Author Information

Name Institution
Do-Heyoung KimChonnam National University
Young Jae KimChonnam National University
Yo Soon SongChonnam National University
Byung-Teak LeeChonnam National University
Jin Hyeok KimChonnam National University
Seigi SuhHarvard University
Roy GordonHarvard University

Films

Plasma WC

Hardware used: Custom


CAS#: 7727-37-9

CAS#: 1333-74-0

Plasma WC


Plasma WC


Thermal WC


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Oxidation Resistance
Analysis: Four-point Probe

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Substrates

SiO2

Notes

52