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Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten

Type:
Journal
Info:
Journal of The Electrochemical Society, 150 (10) C740-C744 (2003)
Date:
2003-09-02
DOI:
http://dx.doi.org/10.1149/1.1610000

Author Information

Name Institution
Do-Heyoung KimChonnam National University
Young Jae KimChonnam National University
Yo Soon SongChonnam National University
Byung-Teak LeeChonnam National University
Jin Hyeok KimChonnam National University
Seigi SuhHarvard University
Roy GordonHarvard University

Films

Plasma WC

Hardware used: Custom
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma WC

Hardware used: Custom
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Plasma WC

Hardware used: Custom
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Thermal WC

Hardware used: Custom
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Oxidation Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

SiO2

Notes

52