Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3

Type:
Journal
Info:
Materials 2020, 13, 1058
Date:
2020-02-20
DOI:
http://dx.doi.org/10.3390/ma13051058

Author Information

Name Institution
Katherine HansenBoston University
Melissa CardonaPurdue University
Amartya DuttaBoston University
Chen YangBoston University

Films

Plasma TiN

Hardware used: Aixtron Genus Stratagem 200
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Plasma TiN

Hardware used: Aixtron Genus Stratagem 200
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
NH3, Ammonia
CAS#: 7664-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: Renishaw Invia Raman

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe II

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Substrates

MgO
Si(100)

Notes

1457