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Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor

Type:
Journal
Info:
Nanoscale Research Letters (2019) 14:76
Date:
2019-02-25
DOI:
http://dx.doi.org/10.1186/s11671-019-2913-2

Author Information

Name Institution
Bao ZhuFudan University
Zi-Jun DingFudan University
Xiaohan WuFudan University
Wen-Jun LiuFudan University
David Wei ZhangFudan University
Shi-Jin DingFudan University

Films

Plasma Co

Hardware used: Picosun R200
Co(EtCp)2, Bis(EthylCyclopentadienyl) Cobalt(II)
CAS#: 55940-05-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 100-270C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension ICON

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Sigma

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Substrates

SiO2

Notes

Assume Picosun due to 2800W plasma.
1265