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Atomic layer deposition of titanium nitride from TDMAT precursor

Type:
Journal
Info:
Microelectronic Engineering 86 (2009) 72-77
Date:
2008-10-02
DOI:
http://dx.doi.org/10.1016/j.mee.2008.09.036

Author Information

Name Institution
Jan MusschootGhent University
Qi XieFudan University
Davy DeduytscheGhent University
Sven Van den BergheSCK-CEN
Ronald L. Van MeirhaegheGhent University
Christophe DetavernierGhent University

Films

Thermal TiN

Hardware used: Custom
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Plasma TiN

Hardware used: Custom
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Plasma TiN

Hardware used: Custom
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker-Axs D8 Advance diffractometer/reflectometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Substrates

SiO2
Si(100)

Notes

Substrates RCA cleaned.
Si(100) substrates HF dipped for diffusion barrier measurements.
Resistivity decreases with increasing plasma power, increasing plasma time, and increasing film thickness.
Reference 11 might be a good read to compare different thin film thickness measurement techniques.
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