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Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors

Type:
Journal
Info:
J. Mater. Chem. C, 2016, 4, 11059-11066
Date:
2016-10-30
DOI:
http://dx.doi.org/10.1039/C6TC03606F

Author Information

Name Institution
Yong-Ping WangFudan University
Zi-Jun DingFudan University
Qi-Xuan LiuFudan University
Wen-Jun LiuFudan University
Shi-Jin DingFudan University
David Wei ZhangFudan University

Films

Plasma Ni

Hardware used: Unknown
Bis(cyclopentadienyl)nickel, Nickelocene, Cp2Ni
CAS#: 1271-28-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 160-280C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Work Function
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Substrates

Notes

957