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Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex

Type:
Journal
Info:
Applied Surface Science 362 (2016) 176 - 181
Date:
2015-11-09
DOI:
http://dx.doi.org/10.1016/j.apsusc.2015.11.095

Author Information

Name Institution
Jeong Hwan HanHanyang University
Hyo Yeon KimKorea Research Institute of Chemical Technology
Sang Chan LeeKorea Research Institute of Chemical Technology
Da Hye KimKorea Research Institute of Chemical Technology
Bo Keun ParkKorea Research Institute of Chemical Technology
Jin-Seong ParkKorea Research Institute of Chemical Technology
Dong Ju JeonKorea Research Institute of Chemical Technology
Taek-Mo ChungKorea Research Institute of Chemical Technology
Chang Gyoun KimKorea Research Institute of Chemical Technology

Films

Plasma TaNx

Hardware used: Unknown
bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 150-250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Density
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

477