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Atomic Layer Deposition of SiN for spacer applications in high-end logic devices

Type:
Journal
Info:
Materials Science and Engineering 41 (2012) 012006
Date:
2012-05-14
DOI:
http://dx.doi.org/10.1088/1757-899x/41/1/012006

Author Information

Name Institution
Fabian KoehlerGlobal Foundries
Dina H. TriyosoGlobal Foundries
Itasham HussainGlobal Foundries
S. MutasGlobal Foundries
H. BernhardtGlobal Foundries

Films

Plasma SiNx

Hardware used: Unknown
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: Custom
Diagnostic: -

Substrates

Notes

Si precursor is a novel low-temperature precursor, monochloro-silane
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