About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets

Type:
Journal
Info:
J. Phys. Chem. C, 2020, 124 (22), pp 11990-12000
Date:
2020-05-12

Author Information

Name Institution
Ji LiuTyndall National Institute, University College Cork
Hong Liang LuFudan University
David Wei ZhangFudan University
M. G. NolanTyndall National Institute, University College Cork

Films

Plasma Co


Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: -

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: -

Substrates

Co

Notes

1506