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Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 041501 (2018)
Date:
2018-05-02
DOI:
http://dx.doi.org/10.1116/1.5025557

Author Information

Name Institution
Yafeng ZhuChinese Academy of Sciences
Fangsen LiChinese Academy of Sciences
Rong HuangChinese Academy of Sciences
Tong LiuChinese Academy of Sciences
Yanfei ZhaoChinese Academy of Sciences
Yang ShenChinese Academy of Sciences
Jian ZhangChinese Academy of Sciences
An DingsunChinese Academy of Sciences
Yun GuoShanghai University

Films

Plasma TiN

Hardware used: Picosun R200
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 250-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Advance

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Advance

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: ION TOF TofSIMS 5

Characteristic: Work Function
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Substrates

Si(100)
GaN

Notes

1551