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TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD

Type:
Journal
Info:
Journal of The Electrochemical Society, 152 (8) G589-G593 (2005)
Date:
2005-01-31
DOI:
http://dx.doi.org/10.1149/1.1938108

Author Information

Name Institution
Kai-Erik ElersASM Microchemistry Oy
Jerry WinklerASM Microchemistry Oy
Keith WeeksASM Microchemistry Oy
Steven MarcusASM Microchemistry Oy

Films

Thermal TiN

Hardware used: ASM Pulsar 2000
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 350-400C

Plasma TiN

Hardware used: Unknown
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 270-370C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: CDE ResMap 168

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Surface Science Instruments ESCA M-Probe

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: Link ISIS Spectrometer

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL 890

Substrates

Silicon

Notes

1008