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Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
ECS Journal of Solid State Science and Technology, 3 (7) P253-P258 (2014)
Date:
2014-05-14
DOI:
http://dx.doi.org/10.1149/2.0141407jss

Author Information

Name Institution
Loïc AssaudAix-Marseille Université
Kristina PitzschelAix-Marseille Université
Margrit HanbückenAix-Marseille Université
Lionel SantinacciAix-Marseille Université

Films

Thermal TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-6320F

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3010

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: INEL

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: HP 4140

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-6320F

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-100

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000V

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: JEOL 3010

Substrates

AAO, Anodic Aluminum Oxide
Si(100)

Notes

Ultratech Fiji thermal and PEALD TiN on high aspect ratio AAO substrates.
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