About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma

Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (1) D42-D47 (2011)
Date:
2010-10-18
DOI:
http://dx.doi.org/10.1149/1.3515320

Author Information

Name Institution
Windu SariYeungnam University
Tae-Kwang EomYeungnam University
Soo-Hyun KimYeungnam University
Hoon KimApplied Materials

Films

Thermal Ru

Hardware used: NCD Technology Lucida MP-100
Isopropylmethylbenzene Cyclohexadiene Ruthenium, IMBCHRu
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 140-400C

Plasma Ru

Hardware used: NCD Technology Lucida MP-100
Isopropylmethylbenzene Cyclohexadiene Ruthenium, IMBCHRu
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 140-400C

Thermal Ru

Hardware used: NCD Technology Lucida MP-100
Isopropylmethylbenzene Cyclohexadiene Ruthenium, IMBCHRu
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 140-400C

Plasma Ru

Hardware used: NCD Technology Lucida MP-100
Isopropylmethylbenzene Cyclohexadiene Ruthenium, IMBCHRu
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 140-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 250

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: VG Scientific Microlab 350

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Substrates

TiN
SiO2

Notes

1360