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Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride

Type:
Journal
Info:
RSC Adv., 2016, 6, 68515-68524
Date:
2016-07-04
DOI:
http://dx.doi.org/10.1039/C6RA10909H

Author Information

Name Institution
Luchana L. YusupSejong University
Jae-Min ParkSejong University
Yong-Ho NohSejong University
Sun-Jae KimSejong University
Won-Jun LeeSejong University
Sora ParkKyung Hee University
Young-Kyun KwonKyung Hee University

Films

Thermal SiNx

Hardware used: Custom
Hexachlorodisilane, Si2Cl6
CAS#: 13465-77-5
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Other SiNx

Hardware used: Custom
Hexachlorodisilane, Si2Cl6
CAS#: 13465-77-5
NH3, Ammonia
CAS#: 7664-41-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Substrates

Silicon

Notes

963