Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 021506 (2017)
Date:
2016-12-22
DOI:
http://dx.doi.org/10.1116/1.4973923

Author Information

Name Institution
Rafaiel A. OvanesyanColorado School of Mines
Dennis M. HausmannLam Research Corporation
Sumit AgarwalColorado School of Mines

Films

Plasma SiNx

Hardware used: Custom Direct Capacitively Coupled Plasma
DMDCS, Dimethyldichlorosilane, Si(CH3)2Cl2
CAS#: 75-78-5
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 475C

Thermal SiNx

Hardware used: Custom
DMDCS, Dimethyldichlorosilane, Si(CH3)2Cl2
CAS#: 75-78-5
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Deposition Temperature = 400C

Other SiNx

Hardware used: Custom Direct Capacitively Coupled Plasma
Hexachlorodisilane, Si2Cl6
CAS#: 13465-77-5
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Ar, Argon
CAS#: 7440-37-1
Deposition Temperature = 320C

Plasma SiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
Hexachlorodisilane, Si2Cl6
CAS#: 13465-77-5
Carbon Monoxide, CO
CAS#: 630-08-0
Deposition Temperature = 400C

Plasma SiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
Hexachlorodisilane, Si2Cl6
CAS#: 13465-77-5
Carbon Monoxide, CO
CAS#: 630-08-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 400C

Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: ATR-FTIR
Diagnostic: Nicolet 6700

Substrates

Si3N4
Silicon
SiOxNy

Notes

848