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Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 021506 (2017)
Date:
2016-12-22
DOI:
http://dx.doi.org/10.1116/1.4973923

Author Information

Name Institution
Rafaiel A. OvanesyanColorado School of Mines
Dennis M. HausmannLam Research Corporation
Sumit AgarwalColorado School of Mines

Films

Plasma SiNx

Hardware used: Custom Direct Capacitively Coupled Plasma
DMDCS, Dimethyldichlorosilane, Si(CH3)2Cl2
CAS#: 75-78-5
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 475C

Thermal SiNx

Hardware used: Custom
DMDCS, Dimethyldichlorosilane, Si(CH3)2Cl2
CAS#: 75-78-5
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Deposition Temperature = 400C

Other SiNx

Hardware used: Custom Direct Capacitively Coupled Plasma
Hexachlorodisilane, Si2Cl6
CAS#: 13465-77-5
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Ar, Argon
CAS#: 7440-37-1
Deposition Temperature = 320C

Plasma SiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
Hexachlorodisilane, Si2Cl6
CAS#: 13465-77-5
Carbon Monoxide, CO
CAS#: 630-08-0
Deposition Temperature = 400C

Plasma SiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
Hexachlorodisilane, Si2Cl6
CAS#: 13465-77-5
Carbon Monoxide, CO
CAS#: 630-08-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 400C

Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: ATR-FTIR
Diagnostic: Nicolet 6700

Substrates

Si3N4
Silicon
SiOxNy

Notes

848