About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Trilayer Tunnel Selectors for Memristor Memory Cells

Type:
Journal
Info:
Adv. Mater. 2016 28(2) 356--362
Date:
2015-11-19
DOI:
http://dx.doi.org/10.1002/adma.201503604

Author Information

Name Institution
Byung Joon ChoiSeoul National University of Science and Technology
Jiaming ZhangHewlett-Packard
Kate J. NorrisHewlett-Packard
Gary A. GibsonHewlett-Packard
Kyung Min KimHewlett-Packard
Warren JacksonHewlett-Packard
Min-Xian Max ZhangHewlett-Packard
Zhiyong LiHewlett-Packard
J. Joshua YangUniversity of Massachusetts, Amherst
R. Stanley WilliamsHewlett-Packard

Films

Plasma TaNx

Hardware used: Unknown
Tert-Butylimido,Tris(diMEthylamino)Tantalum, Ta[N(CH3)2]3[=NC(CH3)3], TBTMET, TBTDMT
CAS#: 69039-11-8
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 300-400C

Plasma TaNx

Hardware used: Unknown
Tert-Butylimido,Tris(diMEthylamino)Tantalum, Ta[N(CH3)2]3[=NC(CH3)3], TBTMET, TBTDMT
CAS#: 69039-11-8
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 300-400C

Plasma Ta2O5

Hardware used: Unknown
Tert-Butylimido,Tris(diMEthylamino)Tantalum, Ta[N(CH3)2]3[=NC(CH3)3], TBTMET, TBTDMT
CAS#: 69039-11-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 300-400C

Film/Plasma Properties

Characteristic: Unknown
Analysis: Four Terminal I-V
Diagnostic: HP 4156A

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Band Gap
Analysis: Optical Absorption
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy
Diagnostic: FEI Titan

Substrates

SiO2

Notes

550