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AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs

Type:

Journal

Info:

IEEE Transations on Electron Devices, vol. 62, no. 6, pp. 1870-1878, 2015

Date:

2015-05-07

DOI:

http://dx.doi.org/10.1109/TED.2015.2420690

Author Information

Name	Institution
Shu Yang	Hong Kong University of Science and Technology
Shenghou Liu	Hong Kong University of Science and Technology
Yunyou Lu	Hong Kong University of Science and Technology
Cheng Liu	Hong Kong University of Science and Technology
Kevin J. Chen	Hong Kong University of Science and Technology