About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer

Type:
Journal
Info:
physica status solidi (a) Volume 212, Issue 12, pages 2785-2790, 2015
Date:
2015-07-14
DOI:
http://dx.doi.org/10.1002/pssa.201532274

Author Information

Name Institution
Woochool JangHanyang University
Heeyoung JeonHanyang University
Hyoseok SongHanyang University
Honggi KimHanyang University
Jingyu ParkHanyang University
Hyunjung KimHanyang University
Hyeongtag JeonHanyang University

Films

Plasma SiNx

Hardware used: Custom Remote Inductively Coupled Plasma
Trisilylamine [N(SiH3)3]
CAS#: 13862-16-3
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

Si(100)

Notes

542