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The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer

Type:
Journal
Info:
physica status solidi (a) Volume 212, Issue 12, pages 2785-2790, 2015
Date:
2015-07-14
DOI:
http://dx.doi.org/10.1002/pssa.201532274

Author Information

Name Institution
Woochool JangHanyang University
Heeyoung JeonHanyang University
Hyoseok SongHanyang University
Honggi KimHanyang University
Jingyu ParkHanyang University
Hyunjung KimHanyang University
Hyeongtag JeonHanyang University

Films

Plasma SiNx

Hardware used: Custom Remote Inductively Coupled Plasma
Trisilylamine [N(SiH3)3]
CAS#: 13862-16-3
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

Si(100)

Notes

542