Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Trisilylamine [N(SiH3)3], CAS# 13862-16-3

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 5 record(s).

NumberTitle
1Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
2The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
3Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
4Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
5Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration