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Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A140 (2016)
Date:
2015-12-03
DOI:
http://dx.doi.org/10.1116/1.4937993

Author Information

Name Institution
Stephen WeeksIntermolecular
Greg NowlingIntermolecular
Nobi FuchigamiIntermolecular
Michael BowesIntermolecular
Karl LittauIntermolecular

Films

Plasma SiNx

Hardware used: Unknown
Trisilylamine [N(SiH3)3]
CAS#: 13862-16-3
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 250-300C

Plasma SiNx

Hardware used: Unknown
Neopentasilane, (SiH3)4Si, NPS
CAS#: 15947-57-6
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 250-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Diagnostic: Custom

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: HFS, Hydrogen Forward Scattering
Diagnostic: -

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Substrates

Si(100)

Notes

446