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Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

Type:
Journal
Info:
physica status solidi (a) Volume 211, Issue 9, pages 2166-2171, September 2014
Date:
2014-05-08
DOI:
http://dx.doi.org/10.1002/pssa.201431162

Author Information

Name Institution
Woochool JangHanyang University

Films

Plasma SiNx

Hardware used: Custom Remote Inductively Coupled Plasma
Trisilylamine [N(SiH3)3]
CAS#: 13862-16-3
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 50-400C

Film/Plasma Properties

Substrates

Notes

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