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High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (11) G323-G325 (2006)
Date:
2006-07-17
DOI:
http://dx.doi.org/10.1149/1.2338777

Author Information

Name Institution
Han-Bo-Ram LeePohang University of Science and Technology (POSTECH)
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films

Plasma Co

Hardware used: Custom
Dicarbonylcyclopentadienylcobalt, CpCo(CO)2
CAS#: 12078-25-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 250-400C

Plasma Co

Hardware used: Custom
cobaltacene, bis(cyclopentadienyl)cobalt, Cp2Co
CAS#: 1277-43-6
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 250-400C

Plasma CoC

Hardware used: Custom
Dicarbonylcyclopentadienylcobalt, CpCo(CO)2
CAS#: 12078-25-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma CoC

Hardware used: Custom
cobaltacene, bis(cyclopentadienyl)cobalt, Cp2Co
CAS#: 1277-43-6
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Si(001)
SiO2

Notes

1014