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Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01A101 (2017)
Date:
2016-10-03
DOI:
http://dx.doi.org/10.1116/1.4964889

Author Information

Name Institution
Hwanwoo KimHanyang University
Hyoseok SongHanyang University
Changhee ShinHanyang University
Kangsoo KimSamsung Electronics Co.
Woochool JangHanyang University
Hyungjun KimHanyang University
Seokyoon ShinHanyang University
Hyeongtag JeonHanyang University

Films

Plasma SiNx

Hardware used: Applied Materials Producer GTTM
TMS, trimethylsilane, Me3SiH
CAS#: 993-07-7
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 300-450C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Stress
Analysis: Stress Measurement
Diagnostic: Frontier Semiconductor FSM 900C2C

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Substrates

Si(100)
Cu

Notes

854