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Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier

Type:
Journal
Info:
Thin Solid Films 685 (2019) 393 - 401
Date:
2019-06-29

Author Information

Name Institution
Jun Beom KimYeungnam University
Dip K. NandiYeungnam University
Tae Hyun KimYeungnam University
Yujin JangKorean Basic Science Institute
Jong-Seong BaeKorean Basic Science Institute
Tae Eun HongKorean Basic Science Institute
Soo-Hyun KimYeungnam University

Films

Plasma WN



CAS#: 7727-37-9

CAS#: 7664-41-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Work Function
Analysis: Scanning Kelvin Probe Microscopy (SKPM)

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction

Characteristic: Diffusion Barrier Properties
Analysis: Four-point Probe

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Substrates

SiO2

Notes

1357