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Plasma enhanced atomic layer deposition of SiNx:H and SiO2

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 29, 041501 (2011)
Date:
2011-04-02
DOI:
http://dx.doi.org/10.1116/1.3584790

Author Information

Name Institution
Sean W. KingIntel Corporation

Films

Plasma SiNx

Hardware used: Unknown
SiH4, Silane
CAS#: 7803-62-5
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 250-400C

Plasma SiO2

Hardware used: Unknown
SiH4, Silane
CAS#: 7803-62-5
CO2, Carbon Dioxide
CAS#: 124-38-9
Deposition Temperature Range = 250-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Film Stress
Analysis: Wafer Curvature
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: Mercury Probe
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bede Fab200 Plus

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Siemens D5000

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Nicolet Magna-IR 860

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bio-Rad QS-3300

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Si(100)

Notes

693