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Plasma enhanced atomic layer deposition of SiNx:H and SiO2

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 29, 041501 (2011)
Date:
2011-04-02

Author Information

Name Institution
Sean W. KingIntel Corporation

Films

Plasma SiNx

Hardware used: Unknown

CAS#: 7803-62-5

CAS#: 7727-37-9

Plasma SiO2

Hardware used: Unknown

CAS#: 7803-62-5

CAS#: 124-38-9

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Film Stress
Analysis: Wafer Curvature

Characteristic: Dielectric Constant, Permittivity
Analysis: Mercury Probe

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)

Notes

693