About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm

Type:
Journal
Info:
IEEE Electron Device Letters
Date:
2016-01-01
DOI:
http://dx.doi.org/10.1109/LED.2015.2514080

Author Information

Name Institution
Vladamir DjaraIBM
Veeresh DeshpandeIBM Research, Zurich Research Lab
Marilyne SousaIBM Research, Zurich Research Lab
Daniele CaimiIBM Research, Zurich Research Lab
Lukas CzornomazIBM Research, Zurich Research Lab
Jean FompeyrineIBM Research, Zurich Research Lab

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Thermal HfO2

Hardware used: Unknown
Deposition Temperature Range N/A

Thermal Al2O3

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

619