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Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 1, PP. 30-32, 2014
Date:
2013-11-14
DOI:
http://dx.doi.org/10.1109/LED.2013.2291551

Author Information

Name Institution
Woojin ChoiSeoul National University
Hojin RyuSeoul National University
Namcheol JeonSeoul National University
Minseong LeeSeoul National University
Ho-Young ChaHongik University
Kwang-Seok SeoSeoul National University

Films

Plasma SiNx

Hardware used: Custom Remote Inductively Coupled Plasma
SiH4, Silane
CAS#: 7803-62-5
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

AlGaN
GaN

Notes

1386