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Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Type:
Journal
Info:
IEEE Transactions on Electron Devices, Volume:63, Issue:5, 2016
Date:
2016-02-29
DOI:
http://dx.doi.org/10.1109/TED.2016.2539341

Author Information

Name Institution
Tian-Li WuIMEC
Jacopo FrancoIMEC
Denis MarconIMEC
Brice De JaegerIMEC
Benoit BakerootIMEC
Steve StoffelsIMEC
Marleen Van HoveIMEC
Guido GroesenekenIMEC
Stefaan DecoutereIMEC

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature = 300C

Thermal Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

GaN

Notes

975