About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Type:
Journal
Info:
IEEE Transactions on Electron Devices, Volume:63, Issue:5, 2016
Date:
2016-02-29

Author Information

Name Institution
Tian-Li WuIMEC
Jacopo FrancoIMEC
Denis MarconIMEC
Brice De JaegerIMEC
Benoit BakerootIMEC
Steve StoffelsIMEC
Marleen Van HoveIMEC
Guido GroesenekenIMEC
Stefaan DecoutereIMEC

Films

Plasma SiNx

Hardware used: Unknown


Thermal Al2O3


Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

GaN

Notes

975