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Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs

Type:
Conference Proceedings
Info:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & ICs (ISPSD)
Date:
2014-06-15
DOI:
http://dx.doi.org/10.1109/ISPSD.2014.6856053

Author Information

Name Institution
Woojin ChoiSeoul National University
Hojin RyuSeoul National University
Namcheol JeonSeoul National University
Minseong LeeSeoul National University
Neung-Hee LeeSeoul National University
Kwang-Seok SeoSeoul National University
Ho-Young ChaSeoul National University

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

AlGaN
GaN

Notes

PEALD SiNx interfacial layer for MISHEMT application.
No PEALD SiNx details provided. Perhaps ICP-CVD system used for other films.
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