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Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Type:
Journal
Info:
Microelectronics Reliability 2015
Date:
2015-11-30
DOI:
http://dx.doi.org/10.1016/j.microrel.2015.11.024

Author Information

Name Institution
Gaudenzio MeneghessoUniversity of Padova
Matteo MeneghiniUniversity of Padova
Davide BisiUniversity of Padova
Isabella RossettoUniversity of Padova
Tian-Li WuIMEC
Marleen Van HoveIMEC
Denis MarconIMEC
Steve StoffelsIMEC
Stefaan DecoutereIMEC
Enrico ZanoniUniversity of Padova

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Thermal Al2O3

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

429