Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2014, 6 (13), pp 10534-1054
Date:
2014-06-10
DOI:
http://dx.doi.org/10.1021/am5021167

Author Information

Name Institution
Ciaran A. MurrayTyndall National Institute, University College Cork

Films

Plasma SiO2

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Substrates

Notes

247