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Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer

Type:
Journal
Info:
2014 International Conference on Solid State Devices and Materials
Date:
2014-09-08
DOI:
https://doi.org/10.7567/SSDM.2014.E-1-2

Author Information

Name Institution
Nicolò RonchiIMEC
Brice De JaegerIMEC
Marleen Van HoveIMEC
Robin RoelofsASM Microchemistry Oy
Tian-Li WuIMEC
Jie HuIMEC
X. KangIMEC
Stefaan DecoutereIMEC

Films

Plasma SiNx

Hardware used: ASM Eagle XP8
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Auriga AU4850

Substrates

AlGaN

Notes

1009