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Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory

Type:
Conference Proceedings
Info:
2014 IEEE 6th International Memory Workshop (IMW)
Date:
2014-05-18
DOI:
http://dx.doi.org/10.1109/IMW.2014.6849362

Author Information

Name Institution
F. KikushimaToshiba Corporation

Films

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

239