About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure

Type:
Journal
Info:
physica status solidi (a) Volume 214, Issue 8, pages 1600726
Date:
2017-04-25

Author Information

Name Institution
Myoung-Jin KangSeoul National University
Minseong LeeSeoul National University
Gwang-Ho ChoiSeoul National University
Il-Hwan HwangSeoul National University
Ho-Young ChaHongik University
Kwang-Seok SeoSeoul National University

Films

Plasma SiNx

Hardware used: Unknown


Film/Plasma Properties

Substrates

GaN
AlGaN
Si3N4

Notes

1088