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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition

Type:
Conference Proceedings
Info:
43rd International Symposium on Compound Semiconductors (ISCS)
Date:
2016-06-26

Author Information

Name Institution
Takayuki SuzukiToyota Technological Institute
Tomiaki YamadaToyota Technological Institute
Ryosuke KawaiToyota Technological Institute
Shohei KawaguchiToyota Technological Institute
Dongyan ZhangToyota Technological Institute
Naotaka IwataToyota Technological Institute

Films

Plasma SiNx

Hardware used: Unknown


Plasma Al2O3

Hardware used: Unknown


Film/Plasma Properties

Substrates

GaN

Notes

969