Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane

Type:
Journal
Info:
ECS Transactions, 33 (2) 365-373 (2010)
Date:
2010-07-01
DOI:
http://dx.doi.org/10.1149/1.3485272

Author Information

Name Institution
Sean W. KingIntel Corporation

Films

Plasma SiNx

Hardware used: Unknown
SiH4, Silane
CAS#: 7803-62-5
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 250-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Stress
Analysis: Wafer Curvature
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: Mercury Probe
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bede Fab200 Plus

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Siemens D5000

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Nicolet Magna-IR 860

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bio-Rad QS-3300

Substrates

Si(100)

Notes

1352