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Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 031514 (2018)
Date:
2018-04-06
DOI:
http://dx.doi.org/10.1116/1.5024605

Author Information

Name Institution
Woochool JangHanyang University
Hyunjung KimHanyang University
Youngkyun KweonHanyang University
Chanwon JungHanyang University
Haewon ChoHanyang University
Seokyoon ShinHanyang University
Hyunjun KimHanyang University
Kyungpil LimHanyang University
Hyeongtag JeonHanyang University
Heewoo LimHanyang University

Films

Plasma SiNx

Hardware used: Unknown
Bis(dimethylaminomethylsilyl)(trimethylsilyl)amine, Me3SiN(SiHMeNMe2)2, (CH3)3SiN(SiH(CH3)N(CH3)2)2
CAS#: 0-0-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 100-500C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Nanoview MG-1000

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: ULVAC PHI Inc., PHI 700

Characteristic: Wet Etch Resistance
Analysis: Custom
Diagnostic: Custom

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan S 80-300 TEM/STEM

Substrates

Si(100)

Notes

1536